First round was a telephonic interview. It lasted around one hour.

Questions were mostly on the basics of semiconductor devices like pn junction and band diagrams. My PhD thesis involved Schottky diodes, so there were some questions on Schottky barrier heights. Some questions on various kinds of photodetectors (MSM and pin) and their relative merits and demerits. Again, this was asked as I worked on it for my PhD.

Second round was an on-site interview that lasted the entire day, from morning to evening. It started with me making a presentation of about 15 minutes on my thesis work. This was followed by individual interviews with each person in the team. Each interview lasted about 45 minutes, and there were 6 people in the team. So the entire process took from morning to evening.

Questions were mostly focused on the basics of semiconductor devices like MOSFETs, BJTs, MOS CV curves, and the effect of non-idealities. MOS CV curve questions were asked by every one of the interviewers. One question on device modeling (model a sigmoid curve) and one question on aptitude (100 windows, all open. First toggle all multiples of 2, then toggle all multiples of 3, and so on. Which windows are open at the end of all the toggling?)

Draw the MOS CV curve for a p-bulk Si MOS device.

Describe the effect of non-idealities like interface charges and traps.